Quantum devices and nanoelectronics

In nano-objects emerging from bottom-up nanotechnology as well as in ultra-scaled top-down nano-transistors, a new physics including quantum features appears and cannot be properly captured by the conventional models of device physics. In this area, beyond the downscaling of silicon transistors, we investigate alternative materials and devices, including III-V FETs, silicon nanocrystals for single-electron devices, carbon nanotube and graphene devices for both electronic and spintronic applications. The simulation tools we develop in this field are essentially based on the Monte Carlo method for the Boltzmann and Wigner transport equations (BTE and WTE, respectively) and on the non-equilibrium Green’s functions (NEGF) formalism.

“Beyond CMOS” recent works:

  • Design of graphene-based nanostructures to enhance negative differential (trans)conductance effects.
  • Self-consistent simulation of single-electron devices based on Si nanocrystals.
  • Investigation of  spin-polarized transport in monolayer and bilayer graphene structures.
  • Monte Carlo study of carbon nanotube field-effect transistors (CNTFET) including either Ohmic or Schottky source-drain contacts.
  • Development of a state-of-the-art self-consistent Wigner-Monte Carlo transport model for the analysis of quantum transport in nanodevices: end-of-roadmap Si transistors, CNTFET, RTD.

“More than Moore” recent works:

  • Analyze of ballistic and quasi-ballistic transport in nanometer-scaled MOSFET, including strained Si layers and/or with double-gate architecture
  • Comparison of multiple-gate MOSFET architectures based on III-V materials.

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Examples of results:
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Collaborations: CEA LEM (Saclay), IMS (Bordeaux), Institute of Physics (Hanoi, Vietnam), LPA (Paris), CEA LETI & INAC (Grenoble), IEMN (Lille), OMMIC (Limeil-Brévannes), LPN (Marcoussis), LPS (Orsay), IMN (Nantes), Nanotimes (Toulouse), CEA DAM (Bruyères-le-Châtel).

Contact: Sylvie Retailleau or Arnaud Bournel


NANOSIM_GRAPHENE (ANR-09-NANO-016): Simulation of Graphene-based Nanomaterials and Nanodevices : Multiscale Approaches, with CEA/LETI&INAC (coordinator : S. Roche / M. Chshiev), IEF, IN, LPS, Nanotimes, IMN.

MIGRAQUEL (ANR-10-BLAN-0304): Microwave Graphene Quantum Electronics, with LPA/ENS (coordinator : B. Plaçais), IEMN, IEF, LPN.

MOS35 (ANR-08-NANO-022): MOSFET based on low bandgap III-V materials for high frequency and low power applications, with IEMN (coordinator : S. Bollaert), OMMIC, IEF, CEA/LETI, CIMAP.

ARIANE (ANR-08-NANO-046): Angular rate sensor with integrated nano gage and dedicated electronics, with CEA/LETI (coordinator : P. Robert), ASYGN, IEF, TRONICS, THALES.

NANOSIL (Network of Excellence, 7th FP, ICT-216171): Silicon-based nanostructures and nanodevices for long term nanoelectronics applications, coordinated by F. Balestra (IMEP).